STTH5L06RL(2001) Просмотр технического описания (PDF) - STMicroelectronics
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STTH5L06RL Datasheet PDF : 5 Pages
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STTH5L06
Fig. 7: Softness factor versus dIF/dt (typical
values).
Fig. 8: Relative variations of dynamic
parameters versus junction temperature.
S factor
2.4
IF=IF(av)
2.2
VR=400V
Tj=125°C
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
dIF/dt(A/µs)
10 20 30 40 50 60 70 80 90 100
1.25
1.00
0.75
0.50
0.25
0.00
25
S factor
IRM
QRR
Tj(°C)
IF=IF(av)
VR=400V
Reference: Tj=125°C
50
75
100
125
Fig. 9: Transient peak forward voltage versus
dIF/dt (90% confidence).
Fig. 10: Forward recovery time versus dIF/dt
(90% confidence).
VFP(V)
10
IF=IF(av)
9
Tj=125°C
8
7
6
5
4
3
2
1
dIF/dt(A/µs)
0
0
20 40 60 80 100 120 140 160 180 200
tfr(ns)
200
180
160
IF=IF(av)
VFR=1.1 x VF max.
Tj=125°C
140
120
100
80
60
40
20
0
0
dIF/dt(A/µs)
20 40 60 80 100 120 140 160 180 200
Fig. 11: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
100
F=1MHz
Vosc =30mV
Tj=25°C
10
VR(V)
1
1
10
100
1000
Fig. 12: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness: 35µm)
Rth(j-a) (°C/W)
80
L lead=10mm
70
60
50
40
30
20
10
S(cm²)
0
0 1 2 3 4 5 6 7 8 9 10
4/5
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