STTH3002CR Просмотр технического описания (PDF) - STMicroelectronics
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STTH3002CR Datasheet PDF : 11 Pages
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STTH3002C
Characteristics
Table 4.
Symbol
Static electrical characteristics
Parameter
Test conditions
Min. Typ Max. Unit
IR(1) Reverse leakage current
VF(2) Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 150 °C
VR = VRRM
IF = 15 A
IF = 30 A
IF = 15 A
IF = 30 A
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation:
P = 0.69 x IF(AV) + 0.01 IF2(RMS)
20
µA
10 125
1.05
1.18
V
0.75 0.84
0.99
Table 5.
Symbol
Dynamic characteristics
Parameter
Test conditions
Min. Typ Max. Unit
trr Reverse recovery time
IRM Reverse recovery current
tfr Forward recovery time
VFP Forward recovery voltage
IF = 1 A, dIF/dt = 200 A/µs,
VR = 30 V, Tj = 25 °C
IF = 15 A, dIF/dt = 200 A/µs,
VR = 160 V, Tj = 125 °C
IF = 15 A, dIF/dt = 200 A/µs
VFR = 1.1 x VFmax, Tj = 25 °C
IF = 15 A, dIF/dt = 200 A/µs,
Tj = 25 °C
17 22 ns
6 7.8 A
110 ns
2.5
V
Figure 1. Peak current versus duty cycle
(per diode)
IM(A)
120
100
IM
T
80
δ=tp/T
tp
P = 30W
60
P = 15W
40
P = 10W
20
δ
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Figure 2.
Forward voltage drop versus
forward current (typical values, per
diode)
IFM(A)
100
90
80
70
Tj=150°C
60
50
40
30
Tj=25°C
20
10
VFM(V)
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
3/11
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