STTH3002CPI(2006) Просмотр технического описания (PDF) - STMicroelectronics

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STTH3002CPI
(Rev.:2006)

High efficiency ultrafast diode

STMicroelectronics 

Characteristics

1

Characteristics

STTH3002C

Table 1. Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified)

Symbol

Parameter

Value Unit

VRRM

IF(RMS)

IF(AV)

IFSM

Tstg

Tj

Repetitive peak reverse voltage

200

V

RMS forward current

50

A

TO-220AB, TO-247, Per diode Tc = 150° C

15

I2PAK, D2PAK

Per device Tc = 145° C

30

Average forward current, δ = 0.5

A

Per diode Tc = 125° C

15

TOP3I

Per device Tc = 105° C

30

Surge non repetitive forward current tp = 10 ms Sinusoidal

Storage temperature range

180

A

-65 to +175 ° C

Maximum operating junction temperature

175

°C

Table 2. Thermal parameters

Symbol

Parameter

Rth(j-c)

Rth(c)

Junction to case

Coupling

TO-220AB, TO-247, I2PAK, D2PAK

TOP3I

TO-220AB, TO-247, I2PAK, D2PAK

TOP3I

Per diode

Total

Per diode

Total

Value

1.5

1.0

3.5

2.3

0.5

1.1

Unit

° C/W

When the two diodes 1 and 2 are used simultaneously:

∆Tj(diode 1) = P (diode 1) X Rth(j-c) (Per diode) + P (diode 2) x Rth(c)

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