STTH12003TV1 Просмотр технического описания (PDF) - STMicroelectronics
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STTH12003TV1 Datasheet PDF : 5 Pages
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STTH12003TV
THERMAL RESISTANCES
Symbol
Rth (j-c) Junction to case
Rth (c)
Parameter
Per diode
Total
Coupling
When the diodes 1 and 2 are used simultaneously:
∆Tj (diode 1) = P (diode 1) x Rth(j-c) (per diode) + P (diode 2) x Rth(C)
Value
0.8
0.45
0.1
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests conditions
Min.
IR * Reverse leakage
current
VR = 300 V
Tj = 25°C
Tj = 125°C
VF ** Forward voltage drop IF = 60 A
Tj = 25°C
Tj = 125°C
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation:
P = 0.75 x IF(AV) + 0.0042 x IF2(RMS)
Typ.
0.12
0.85
Max.
120
1.2
1.25
1
Unit
µA
mA
V
RECOVERY CHARACTERISTICS
Symbol
Tests conditions
trr
IF = 0.5 A Irr = 0.25 A
IR = 1A
IF = 1 A dIF/dt = - 50 A/µs VR = 30 V
tfr
VFP
Sfactor
IRM
IF = 60 A
dIF/dt = 200 A/µs
VFR = 1.1 x VF max.
Vcc = 200 V
IF = 60 A
dIF/dt = 200 A/µs
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 125°C
Min. Typ. Max. Unit
55
ns
70
600 ns
5
V
0.3
-
14
A
2/5
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