PS16170CB Просмотр технического описания (PDF) - STMicroelectronics
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PS16170CB Datasheet PDF : 10 Pages
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STPS16170C
Characteristics
Figure 1.
Conduction losses versus average Figure 2.
forward current (per diode)
Average forward current versus
ambient temperature (δ = 0.5, per
diode)
PF(AV)(W)
8
7
δ=0.05
δ=0.1
δ=0.2
δ=0.5
δ=1
6
5
4
3
2
T
1
IF(AV)(A)
δ=tp/T
tp
0
0
1
2
3
4
5
6
7
8
9
10
IF(av)(A)
9
8
7
6
5
4
3
T
2
1
δ=tp/T
0
0
25
tp
50
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
75 100 125 150 175
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
25
50
Tj(°C)
75
100
125
150
Figure 5.
IM(A)
120
100
80
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Figure 6.
Relative variation of thermal
impedance junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
1.0
Single pulse
TO-220AB
DPAK
I²PAK
D²PAK
60
TC=50°C
40
20
IM
0
1.E-03
t
δ =0.5
t(s)
1.E-02
1.E-01
TC=75°C
TC=125°C
1.E+00
0.1
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
3/10
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