P5NK80Z Просмотр технического описания (PDF) - STMicroelectronics

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P5NK80Z

N-channel 800V - 1.9Ω - 4.3A - TO-220/TO-220FP Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

Electrical characteristics

STP5NK80Z - STP5NK80ZFP

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD= 4.3 A, VGS=0

ISD= 4.3 A,

di/dt = 100A/µs,

VDD=40 V, Tj = 150°C

(see Figure 20)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min Typ. Max Unit

4.3 A

17.2 A

1.6 V

500

ns

3

µC

12

A

6/15

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