B60NF10 Просмотр технического описания (PDF) - STMicroelectronics

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B60NF10

N-channel 100V - 0.019Ω - 80A - TO-220 - D2PAK - I2PAK STripFET™ II Power MOSFET

STMicroelectronics 

STB60NF10 - STB60NF10 -1 - STP60NF10

1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS Drain-source voltage (VGS = 0)

VGS Gate-source voltage

ID(1) Drain current (continuous) at TC = 25°C

ID Drain current (continuous) at TC=100°C

IDM(2) Drain current (pulsed)

PTOT Total dissipation at TC = 25°C

Derating factor

dv/dt (3) Peak diode recovery voltage slope

EAS (4) Single pulse avalanche energy

Tstg Storage temperature

1. Current limited by package

2. Pulse width limited by safe operating area

3. ISD ≤80A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, TJ ≤TJMAX

4. Starting TJ = 25 oC, ID = 40A, VDD = 30V

Table 2. Thermal data

Symbol

Parameter

RthJC

RthJA

Tl

Thermal resistance junction-case max

Thermal resistance junction-ambient max

Maximum lead temperature for soldering

purpose

Electrical ratings

Value

100

± 20

80

66

320

300

2

16

485

-55 to 175

Unit

V

V

A

A

A

W

W/°C

V/ns

J

°C

Value

0.5

62.5

300

Unit

°C/W

°C/W

°C

3/15

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