B13NK60Z Просмотр технического описания (PDF) - STMicroelectronics

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B13NK60Z

N-channel 600 V, 0.48 Ω, 13 A, TO-220, TO-220FP, D2PAK TO-247 Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

STB13NK60ZT4, STx13NK60Z, STP13NK60ZFP

2

Electrical characteristics

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Figure 2. On/off states

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS= 0

600

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating,Tc=125 °C

1 µA

50 µA

IGSS

Gate body leakage

current (VDS = 0)

VGS = ±20 V

±10 µA

VGS(th) Gate threshold voltage VDS= VGS , ID = 100 µA

3 3.75 4.5 V

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 4.5 A

0.48 0.55 Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

gfs (1)

Forward

transconductance

VDS =8 V, ID = 5 A

-

11

S

Ciss

Input capacitance

2030

pF

Coss Output capacitance

VDS =25 V, f=1 MHz, VGS=0 -

210

pF

Reverse transfer

Crss

capacitance

48

pF

Coss

(2)

eq.

Equivalent output

capacitance

VGS=0, VDS =0 to 480 V

- 125

pF

Qg

Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD=480 V, ID = 10 A

VGS =10 V

(see Figure 21)

66 92 nC

-

11

nC

33

nC

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Doc ID 8527 Rev 7

5/18

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