STB11NK40ZT4 Просмотр технического описания (PDF) - STMicroelectronics

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STB11NK40ZT4

N-channel 400 V, 0.49 Ω, 9 A, TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET

STMicroelectronics 

Electrical ratings

STB11NK40Z, STP11NK40ZFP, STP11NK40Z

Table 4. Avalanche characteristics

Symbol

Parameter

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

Single pulse avalanche energy

EAS

(starting Tj=25°C, Id=Iar, Vdd=50V)

Value

Unit

9

A

190

mJ

4/17

Doc ID 8936 Rev 7

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