B20NM60D Просмотр технического описания (PDF) - STMicroelectronics
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B20NM60D Datasheet PDF : 13 Pages
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Electrical characteristics
2
Electrical characteristics
STB20NM60D
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
V(BR)DSS
Drain-source breakdown
voltage
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test condictions
Min Typ Max Unit
ID = 250µA, VGS = 0
600
V
VDS = Max rating
VDS = Max rating, TC = 125 °C
VGS = ±30V
VDS = VGS, ID = 250µA
3
1 µA
10 µA
±10
0
µA
4 5V
VGS = 10V, ID = 10A
0.26 0.29 Ω
Table 5. Dynamic
Symbol
Parameter
Test condictions
Min Typ Max Unit
gfs (1) Forward transconductance
VDS > ID(on) x RDS(on)max,
ID = 10A
9
S
Ciss Input capacitance
1300
pF
Coss Output capacitance
VDS = 25V, f = 1 MHz, VGS = 0
500
pF
Crss Reverse transfer capacitance
35
pF
Coss eq. (2) Equivalent output capacitance VGS = 0V, VDS = 0V to 480V
190
pF
RG Gate input resistance
f=1 MHz Gate DC Bias = 0
Test signal level = 20mV
open drain
2.7
Ω
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 480V, ID = 20A,
VGS = 10V
(see Figure 13)
37 52 nC
10
nC
17
nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80%
4/13
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