SST2625 Просмотр технического описания (PDF) - Secos Corporation.
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SST2625 Datasheet PDF : 4 Pages
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Elektronische Bauelemente
SST2625
-2.3A, -30V,RDS(ON) 135mΩ
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 oC Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
BVDS/ Tj
VGS(th)
Gate-Source Leakage Current
IGSS
Drain-Source Leakage Current (Tj=25oC)
IDSS
Drain-Source Leakage Current (Tj=70oC)
Static Drain-Source On-Resistance 2
RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Gfs
Min.
-30
_
-0.5
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
-0.02
_
_
_
_
_
_
_
4
0. 5
2
5
6
20
3
265
42
32
3.3
Max.
_
_
-1.2
±100
-1
-25
135
185
265
6
_
_
_
_
_
_
425
_
_
_
Unit Test Condition
V
VGS=0V, ID=-250uA
V/ oC Reference to 25oC,ID=-1mA
V
VDS=VGS, ID=-250uA
nA
VGS=± 12V
uA
VDS=-30V,VGS=0
uA
VDS=-24V,VGS=0
VGS=-10V, ID=-2A
mΩ
VGS=-4.5V, ID=-1.6A
VGS=-2.5V, ID=-1.0A
ID=-2A
nC
VDS=-24V
VGS=-4.5V
VDD=-15V
ID=-1A
nS
VGS=-10V
RG=3.3Ω
RD=15Ω
VGS=0V
pF
VDS=-25V
f=1.0MHz
S
VDS=-5V, ID=-2A
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time 2
Reverse Recovery Charge
Symbol
VDS
Trr
Qrr
Min.
_
_
_
Typ.
_
21
16
Max.
-1.2
_
_
Unit
V
Test Condition
IS=-1. A, VGS=0V.
nS Is=-2A, V GS=0V
nC
dl/dt=100A/uS
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 in2copper pad of FR4 board; 180 OC/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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