SST2603 Просмотр технического описания (PDF) - Secos Corporation.
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SST2603 Datasheet PDF : 4 Pages
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Elektronische Bauelemente
SST2603
-5A, -20V,RDS(ON) 65mΩ
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25oC Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
BVDS/ Tj
VGS(th)
Gate-Source Leakage Current
IGSS
Drain-Source Leakage Current (Tj=25 oC)
IDSS
Drain-Source Leakage Current (Tj=55oC)
Static Drain-Source On-Resistance2
RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Gfs
Min.
-20
_
-0.5
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
-0.1
_
_
_
_
_
_
_
_
10.6
2.32
3.68
5.9
3.6
32.4
2.6
740
167
126
9
Max.
_
_
-1.2
±100
-1
-10
53
65
120
250
16
_
_
_
_
_
_
1200
_
_
_
Unit Test Condition
V
V/ oC
VGS=0V, ID=-250uA
Reference to 25oC, ID=-1mA
V
VDS=VGS, ID=-250uA
nA
VGS=±12V
uA
VDS=-20V,VGS=0
uA
VDS=-16V,VGS=0
VGS=-10V, ID=-4.5A
VGS=-4.5V, ID=-4.2A
mΩ
VGS=-2.5V, ID=-2.0A
VGS=-1.8V, ID=-1.0A
ID=-4.2A
nC
VDS=-16V
VGS=-4.5V
VDD=-15V
ID=-4.2A
nS
VGS=-10V
RG=6 Ω
RD=3.6Ω
VGS=0V
pF
VDS=-15V
f=1.0MHz
S
VDS=-5V, ID=-2.8A
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time 2
Reverse Recovery Charge
Symbol
VDS
Trr
Qrr
Min.
_
_
_
Typ.
_
27.7
22
Max.
-1.2
_
_
Unit Test Condition
V
IS=-1.2A, VGS=0V.
nS Is=-4.2A, VGS=0V
nC dl/dt=100A/us
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 in2 copper pad of FR4 board; 156OC/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
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