SSF2302 Просмотр технического описания (PDF) - Silikron Semiconductor Co.,LTD.
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SSF2302 Datasheet PDF : 7 Pages
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Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
RDS(ON)
gFS
Clss
Coss
Crss
t d(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
VGS=2.5V, ID=3.1A
VGS=4.5V, ID=3.6A
VDS=5V,ID=3.6A
VDS=10V,VGS=0V,
F=1.0MHz
VDD=10V, RL = 2.8 Ω
VGS=4.5V,RGEN=6Ω,
ID=3.6A,
VDS=10V,ID=3.6A,VGS=4.5V
VGS=0V,IS=0.94A
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
SSF2302
70
115
mΩ
45
60
mΩ
8
S
300
PF
120
PF
80
PF
7
15
nS
55
80
nS
16
60
nS
10
25
nS
4.0
10
nC
0.65
nC
1.5
nC
0.76 1.2
V
0.94
A
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