GR581 Просмотр технического описания (PDF) - Gennum -> Semtech
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GR581 Datasheet PDF : 4 Pages
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
VALUE
Supply Voltage
Power Dissipation
Operating Temperature Range
Storage Temperature Range
3 VDC
25 mW
-10°C to 40°C
-20°C to 70°C
CAUTION
CLASS 1 ESD SENSITIVITY
PIN CONNECTIONS
A OUT
RECTCAP
RECTIN
VB
VREG
A IN
GND
CA
CB
B OUT
ELECTRICAL CHARACTERISTICS Conditions: Supply Voltage VCC = 1.3 V, Temperature 25oC
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Total Current
Voltage Regulator (Pin 1)
Input Referred Noise
Attack Time
Release Time
STAGE A
IT
165
300
VREG
0.87 0.93
IRN
NFB 0.2 - 10kHz Filter fc set to 0.2kHz -
2.6
at 12dB/oct Filter fc set to 2kHz
-
5.6
tATT
-
30
tREL
-
90
450
0.99
-
-
-
-
µA
VDC
µVRMS
ms
ms
Quiescent Voltage on pin 5
Open Loop Gain
Feedback Resistor
Current Sourcing Capacity
Current Sinking Capacity
FILTER SECTION
VQ5
AOL
RF
ISOURCE
ISINK
0.49
-
45
56
175
265
15
30
15
30
0.67
-
VDC
dB
355
kΩ
-
µA
-
µA
Quiescent Voltage on pin 3
Quiescent Voltage on pin 4
Quiescent Voltage on pin 8
Quiescent Voltage on pin 9
Filter Insertion Loss
Distortion
VQ3
VQ4
VQ8
VQ9
FIL
THD
Rectifier Gain
AREC
VOUT = 850mVRMS f=2kHz (S1 closed)
VOUT = 850mVRMS f=1kHz (S1 closed)
VAC 2 = 2.5mVRMS (S2 closed)
f = 100Hz (Note 1)
0.49
0.49
0.55
0.55
-0.5
-
5
0.58
0.58
-
-
0.1
2
7
0.67
0.67
0.78
0.78
1.3
3
9
VDC
VDC
VDC
VDC
dB
%
Rectifier Bandwidth
Pin 9 Nominal Current
Current Range
Slope
BR
IP9
IRANGE
VAC2 = 20mVRMS (S2 closed)
VP9 = 0V
(Note 2, 3)
(Note 2, 4)
-
4
0.70 1.00
8
10
0.75
1
-
kHz
1.30
µA
12
1.25
Rectifier Threshold
VTH
f = 100Hz (Note 2, 5)
1.7
2.5
2.8
mVDC
Corner Frequency
fc
(Note 2, 6)
140
200
260
Hz
All Conditions and Parameters remain as show in Test Circuit unless otherwise specified in CONDITIONS Column.
VQX - quiescent (unbias) voltage measured on the pin, (nothing connected to the pin). VPX - actual voltage measured on the pin at given condition ( X is pin number).
NOTES:
1. AREC = 1.9375 x (VP4 / VP3) [VIN = 10mVRMS] - 0.9375 x (VP4 / VP3) [VIN = 18mVRMS]
2. ID0 = IP9 [VP9 = 0] ;
ID1 = IP9 [ VP4 = VQ4 + 35mV ; VP9 = 0]
ID2 = IP9 [VP4 = VQ4 + 85mV ; VP9 = 0]; ID3 = IP9 [VP4 = VQ4 + 180mV ; VP9 = 0]
3. IRANGE = ID3 / ID0
4. SLOPE = ((ID2 - ID1 ) / 50mV ) x 14kΩ
5. VAL = 85mV - ((ID2 - ID0) / SLOPE) x 14kΩ: VAH = 85mV + ( 50mV x ( ID3 - ID2 ) / ( ID2 - ID1 ));
VP4 ≤ VAL [VIN = 1.7mVRMS] and VP4 ≥ VAL [VIN = 2.8mVRMS]
6. ƒc = 1 / ( 2 x π x 1.41 x 10nF x R );
R = 26mV x (( 1 / ID0 ) + ( 1 / ( I2 - ID0 )))
520 - 60 - 05
I2 = ((3 x ( ID0 + IP9[VP9 = VQ9 + 18mV] )) / ( 4 - (( ID0 + IP9 [VP9 = VQ9 + 18mV] ) / ( ID0 + IP9[VP9 = VQ9 - 18mV] )))
2
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