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SM2G54

TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE

Toshiba 

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

SM2G54,SM2L54

CHARACTERISTIC

Repetitive Peak Off−State Current

I

Gate Trigger Voltage

II

III

I

Gate Trigger Current

II

III

Peak On−State Voltage

Gate Non−Trigger Voltage

Holding Current

Thermal Resistance

Critical Rate of Rise of Off−State Voltage

Critical Rate of Rise of Off−State Voltage

at Communication

SYMBOL

TEST CONDITION

IDRM

VGT

IGT

VTM

VGD

IH

Rth (j−a)

dv / dt

(dv / dt) c

VDRM = 800V

VD = 12V,

RL = 20Ω

T2 (+) , Gate (+)

T2 (+) , Gate (−)

T2 (−) , Gate (−)

VD = 12V,

RL = 20Ω

T2 (+) , Gate (+)

T2 (+) , Gate (−)

T2 (−) , Gate (−)

ITM = 3A

VD = 800V, Tc = 125°C

VD = 12V, ITM = 1A

Junction to Ambient, AC

VDRM = 800V, Tj = 125°C

Exponential Rise

VDRM = 400V, Tj = 80°C

(di / dt) c = − 0.5A / ms

MIN TYP. MAX UNIT

−

−

20

µA

−

−

1.5

−

−

1.5

V

−

−

1.5

−

−

10

−

−

10

mA

−

−

10

−

−

2.0

V

0.2

−

−

V

−

−

10

mA

−

−

83 °C / W

50

−

− V / µs

5

−

− V / µs

MARKING

Lot No.

(Weekly code)

With underline:

Lead (Pb)-Free or

Lead (Pb)-Free Finish

Part No. (or brevity code)

M2G54 or M2L54

2

2004-07-15

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