M12G45 Просмотр технического описания (PDF) - Toshiba
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M12G45 Datasheet PDF : 5 Pages
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SM12G45,SM12J45,SM12G45A,SM12J45A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM12G45,SM12J45,SM12G45A,SM12J45A
AC POWER CONTROL APPLICATIONS
l Repetitive Peak Off−State Voltage : VDRM = 400, 600V
l R.M.S On−State Current
: IT (RMS) = 12A
l High Commutating (dv / dt)
Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off−State Voltage
SM12G45
SM12G45A
SM12J45
SM12J45A
R.M.S On−State Current
(Full Sine Waveform Tc = 98°C)
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I2t Limit Value (t = 1~10ms)
Critical Rate of Rise of On−State
Current
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
SYMBOL
VDRM
IT (RMS)
ITSM
I2t
di / dt
PGM
PG (AV)
VGM
IGM
Tj
Tstg
RATING
400
600
12
120 (50Hz)
132 (60Hz)
72
50
5
0.5
10
2
−40~125
−40~125
UNIT
V
A
A
A2s
A / µs
W
W
V
A
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 2.0g
TO−220AB
―
13−10G1A
1
2001-07-13
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