SKW30N60(2008) Просмотр технического описания (PDF) - Infineon Technologies

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SKW30N60
(Rev.:2008)

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

Figure A. Definition of switching times

SKW30N60

i,v

di /dt

F

I

F

I

rrm

t =t +t

rr S F

Q =Q +Q

rr

S

F

t

rr

t

t

S

F

QQ

S

F

10% I

t

rrm

di /dt V

90% I r r

R

rrm

Figure C. Definition of diodes

switching characteristics

τ1

r1

Tj (t)

p(t)

r1

τ2

r2

r2

τn

rn

rn

TC

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses

Published by

Infineon Technologies AG,

12

Figure E. Dynamic test circuit

Leakage inductance Lσ =180nH

a nd Stray capacity C σ =900pF.

Rev. 2_2 Sep 08

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