SKB10N60A(2002) Просмотр технического описания (PDF) - Infineon Technologies

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SKB10N60A
(Rev.:2002)

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKP10N60A, SKB10N60A

SKW10N60A

i,v

di /dt

F

I

F

I

rrm

t =t +t

rr S F

Q =Q +Q

rr

S

F

t

rr

t

t

S

F

QQ

S

F

10% I

t

rrm

di /dt V

90% I r r

R

rrm

Figure A. Definition of switching times

Figure C. Definition of diodes

switching characteristics

τ1

τ2

τn

r1

r2

rn

Tj (t)

p(t)

r1

r2

rn

TC

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses

Published by

Infineon Technologies AG,

13

Figure E. Dynamic test circuit

Leakage inductance Lσ =180nH

an d Stray capacity Cσ =55pF.

Sep-02

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