SIM300D06AV3 Просмотр технического описания (PDF) - SemiWell Semiconductor

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SIM300D06AV3

“HALF-BRIDGE” IGBT MODULE

SemiWell Semiconductor 

Preliminary

SIM300D06AV3

Electrical Characteristic Values (IGBT / DIODE) @ Tj = 25℃ (unless otherwise specified)

Parameters

Min Typ Max Unit

Test conditions

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VBR

IRM

trr

Qrr

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Cathode-Anode breakdown Voltage

Maximum Reverse Leakage Current

Reverse Recovery Time

Reverse Recovery Charge

ㅡ

18480

ㅡ

ㅡ

1152

ㅡ

ㅡ

548

ㅡ

ㅡ

115

ㅡ

ㅡ

45

ㅡ

ㅡ

200

ㅡ

ㅡ

45

ㅡ

600

ㅡ

ㅡ

ㅡ

ㅡ

350

ㅡ

120

ㅡ

ㅡ

13.5

ㅡ

VCE = 25V, VGE = 0V

pF

f = 1 MHz

Inductive Switching (125℃)

VCC = 300V

ns

IC = 300A, VGE = ±15V

RG = 3.3Ω

V

㎂

VR = 600V

ns IF = 300A, VR = 300V

µC

di / dt = 3100A /㎲

Thermal Characteristics

Symbol

Parameter

RΘJC

Junction-to-Case (IGBT Part, Per 1/2 Module)

RΘJC

Junction-to-Case (Diode Part, Per 1/2 Module)

RΘCS

Case-to-Heat Sink (Conductive grease applied)

Min

-

-

-

Typ

-

-

0.03

Max

0.13

0.21

-

Unit

℃/W

-2-

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