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SI4702-C19 Просмотр технического описания (PDF) - Silicon Laboratories

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SI4702-C19 Datasheet PDF : 46 Pages
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Si4702/03-C19
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Symbol
Test Condition
Min
Typ
Max Unit
Digital Supply Voltage
Analog Supply Voltage
Interface Supply Voltage
Digital Power Supply Power-Up
Rise Time
VD
VA
VIO
VDRISE
2.7
5.5
V
2.7
5.5
V
1.5
3.6
V
10
µs
Analog Power Supply Power-Up
Rise Time
VARISE
10
µs
Interface Power Supply Power-Up VIORISE
Rise Time
10
µs
Ambient Temperature
TA
–20
25
85
°C
Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at VD = VA = 3.3 V and 25 °C unless otherwise stated. Parameters are tested in production unless
otherwise stated.
Table 2. Absolute Maximum Ratings1,2
Parameter
Symbol
Value
Unit
Digital Supply Voltage
VD
–0.5 to 5.8
V
Analog Supply Voltage
VA
–0.5 to 5.8
V
Interface Supply Voltage
Input Current3
Input Voltage3
VIO
–0.5 to 3.9
V
IIN
±10
mA
VIN
–0.3 to (VIO + 0.3)
V
Operating Temperature
TOP
–40 to 95
°C
Storage Temperature
RF Input Level4
TSTG
–55 to 150
°C
0.4
VpK
Notes:
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond
recommended operating conditions for extended periods may affect device reliability.
2. The Si4702/03-C19 device is a high-performance RF integrated circuit with an ESD rating of < 2 kV HBM. Handling
and assembly of this device should only be done at ESD-protected workstations.
3. For input pins SCLK, SEN, SDIO, RST, RCLK, GPIO1, GPIO2, and GPIO3.
4. At RF input pins.
4
Rev. 1.1

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