SI4126 Просмотр технического описания (PDF) - Silicon Laboratories
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SI4126 Datasheet PDF : 34 Pages
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Si4136/Si4126
Table 5. RF and IF Synthesizer Characteristics
(VDD = 2.7 to 3.6 V, TA = –40 to 85 °C)
Parameter1
Symbol
Test Condition
Min
Typ
Max
Unit
XIN Input Frequency
XIN Input Frequency
Reference Amplifier Sensitivity
fREF
fREF
VREF
XINDIV2 = 0
XINDIV2 = 1
2
—
25
MHz
25
—
50
MHz
0.5
—
VDD
VPP
+0.3 V
Phase Detector Update Frequency
RF1 VCO Tuning Range2
RF2 VCO Tuning Range2
f
f= fREF/R for
0.010 —
1.0
MHz
XINDIV2 = 0
f= fREF/2R for
XINDIV2 = 1
2300
—
2500 MHz
2025
—
2300 MHz
IF VCO Center Frequency Range
IFOUT Tuning Range from fCEN
IFOUT VCO Tuning Range from fCEN
RF1 VCO Pushing
fCEN
with IFDIV
Note: L ±10%
Open loop
526
—
952 MHz
62.5
—
1000 MHz
–5
—
5
%
—
0.75
— MHz/V
RF2 VCO Pushing
—
0.65
— MHz/V
IF VCO Pushing
—
0.10
— MHz/V
RF1 VCO Pulling
RF2 VCO Pulling
VSWR = 2:1, all
phases, open loop
— 0.250 — MHz p-p
— 0.100 — MHz p-p
IF VCO Pulling
— 0.025 — MHz p-p
RF1 Phase Noise
1 MHz offset
—
–130
— dBc/Hz
RF1 Integrated Phase Error
100 Hz to 100 kHz
—
1.2
— degrees
rms
RF2 Phase Noise
1 MHz offset
—
–131
— dBc/Hz
RF2 Integrated Phase Error
100 Hz to 100 kHz
—
1.0
— degrees
rms
IF Phase Noise at 800 MHz
100 kHz offset
—
–104
— dBc/Hz
IF Integrated Phase Error
100 Hz to 100 kHz
—
0.4
— degrees
rms
Notes:
1. f(RF) = 1 MHz, f(IF) = 1 MHz, RF1 = 2.4 GHz, RF2 = 2.1 GHz, IFOUT = 800 MHz, LPWR = 0, for all parameters
unless otherwise noted.
2. RF VCO tuning range limits are fixed by inductance of internally bonded wires.
3. From powerup request (PWDN or SEN during a write of 1 to bits PDIB and PDRB in Register 2) to RF and IF
synthesizers ready (settled to within 0.1 ppm frequency error).
4. From powerdown request (PWDN, or SENduring a write of 0 to bits PDIB and PDRB in Register 2) to supply current
equal to IPWDN.
8
Rev. 1.41
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