BA12004B Просмотр технического описания (PDF) - ROHM Semiconductor
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BA12004B Datasheet PDF : 7 Pages
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Standard ICs
BA12001B / BA12003B / BA12003BF / BA12004B
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Output leakage current
IL
DC current transfer ratio
hFE
Output saturation voltage
VCE(sat)
BA12003B / BF
BA12004B
VIN
BA12003B / BF
Input voltage
VIN
BA12004B
BA12003B / BF
VIN
BA12004B
BA12003B / BF
Input current
IIN
BA12004B
Diode reverse current
IR
Diode forward voltage
VF
Input capacitance
CIN
−
1000
−
−
−
−
−
−
−
−
0
2400
0.94
1.14
1.46
1.75
2.53
1.91
2.75
2.17
3.27
0.90
0.39
0
1.73
30
10
−
1.1
1.3
1.6
2
5
2.4
6
3.4
8
1.35
0.5
50
2
−
µA
VCE = 60V
V
VCE = 2V, IOUT = 350mA
IOUT = 100mA, IIN = 250µA
V
IOUT = 200mA, IIN = 350µA
IOUT = 350mA, IIN = 500µA
V
VCE = 2V, IOUT = 100mA
V
VCE = 2V, IOUT = 200mA
V
VCE = 2V, IOUT = 350mA
VIN = 3.85V
mA
VIN = 5V
µA VR = 60V
V
IF = 350mA
pF VIN = 0V, f = 1MHz
Note: Input voltage and input current for BA12001 vary based on external resistor.
!Measurement circuits
(1) Output leakage current IL
OPEN
OPEN
IL
VCE
(2) DC current transfer ratio
Output saturation voltage
OPEN
hFE
VCE
=(sat)IIOI
II
IO
VCE (sat)
(3) Input voltage VIN
OPEN
IO
VI
VCE
(4) Input current IIN
OPEN
VI
(5) Diode reverse current IR
OPEN
OPEN
IR
VR
OPEN
(7) Input capacitance CIN
OPEN
f
Capacitance HI
bridge
LO
VI
OPEN
TEST SIGNAL LEVEL 20mVrms
Fig.4
(6) Diode forward voltage IF
OPEN
OPEN
IF
VF
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