XC835/836
Electrical Parameters
Table 8
Input/Output Characteristics (Operating Conditions apply) (cont’d)
Parameter
Symbol
Limit Values Unit Test Conditions
Min. Max.
Input low voltage on VILP SR –
port pins
0.3 × V
VDDP
CMOS Mode
(5 & 3.3 V)
Input high voltage on VIHP SR 0.7 × –
port pins
VDDP
V CMOS Mode
(5 V & 3.3 V)
Input Hysteresis1) HYS CC 0.08 × –
V CMOS Mode (5 V)
VDDP
0.03 × –
V CMOS Mode (3.3 V)
VDDP
0.01 × –
V CMOS Mode (2.5 V)
VDDP
Pull-up current
IPUP SR –
-20
µA VIH,min (5 V)
-150 –
µA VIL,max (5 V)
–
-5
µA VIH,min (3.3 V)
-100 –
µA VIL,max (3.3 V)
Pull-down current
IPDP SR –
20
µA VIL,max (5 V)
150 –
µA VIH,min (5 V)
–
5
µA VIL,max (3.3 V)
100 –
µA VIH,min (3.3 V)
Input leakage current IOZP CC -1
1
on port pins2)
(all except P1)
µA 0 < VIN < VDDP,
TA ≤ 125 °C
Input leakage current IOZP1 CC -3
on P1[3:0]2)
Input leakage current IOZP2 CC -2
on P1[5:4]2)
Overcurrent
threshold per pin for
P1[3:0]3)
|IOCP1| SR 60
Overload current on IOVP SR -5
any pin
Absolute sum of
overload currents
Σ|IOV| SR –
3
µA 0 < VIN < VDDP,
TA ≤ 125 °C
2
µA 0 < VIN < VDDP,
TA ≤ 125 °C
115 mA VDDP = 5 V
5
mA 4)
25
mA 4)
Data Sheet
26
V1.2, 2011-03