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SAA4955

2.9-Mbit field memory

Philips Electronics 

Philips Semiconductors

2.9-Mbit field memory

Product specification

SAA4955TJ

Cascade operation

If a longer delay is needed, the total storage depth can be

increased beyond 2949264 bits by cascading several

SAA4955TJs. For details see the interconnection and

timing diagrams (Figs 17 and 18).

continuously for 1024 SWCK clock cycles, the

SAA4955TJ will enter test mode. It will exit test mode if WE

is LOW for a single SWCK cycle or if RSTW is LOW for

2 SWCK clock cycles.

Test mode operation

The SAA4955TJ incorporates a test mode not intended for

customer use. If WE and RSTW are held HIGH

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

VDD, VDD(O)

VDD(P)

VI

supply voltages

supply voltage for protection circuits

input voltage

VO

output voltage

IDD(tot)

∆V

IO

Ptot

Tstg

Tj

Tamb

Ves

total supply current

voltage difference between GND,

GNDO and GNDP

short circuit output current

total power dissipation

storage temperature

junction temperature

ambient temperature

electrostatic handling

CONDITIONS

MIN.

−0.5

−0.5

VDD(P) = 5 V

−0.5

VDD = VDD(O) = VDD(P) = 3.3 V −0.5

VDD(P) = 5 V

VDD = VDD(O) = VDD(P) = 3.3 V

−0.5

−0.5

−

−0.5

MAX.

+5

+5.5

+5.5

+3.8

+5

+3.8

200

+0.5

UNIT

V

V

V

V

V

V

mA

V

note 1

note 2

−

50

mA

−

750

mW

−20

+150

°C

0

125

°C

0

70

°C

−150

+200

V

−2000 +2000 V

Notes

1. Machine model: equivalent to discharging a 200 pF capacitor through a 0 Ω series resistor (‘0 Ω’ is actually

0.75 µH + 10 Ω).

2. Human body model: equivalent to discharging a 100 pF capacitor through a 1500 Ω series resistor.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth(j-a)

thermal resistance from junction to ambient

CONDITIONS

in free air

VALUE

60

UNIT

K/W

1999 Apr 29

9

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