S116S02F Просмотр технического описания (PDF) - Sharp Electronics
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S116S02F Datasheet PDF : 13 Pages
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■ Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Symbol Rating Unit
Input
Forward current
Reverse voltage
RMS ON-state current
Peak one cycle surge current
IF
50 *3 mA
VR
6
V
IT(rms) 16 *3 A
Isurge
160 *4
A
Repetitive
S116S02
400
peak OFF-state voltage S216S02 VDRM
600
V
Output
Non-Repetitive
S116S02
400
peak OFF-state voltage S216S02 VDSM
600
V
Critical rate of rise of ON-state current dIT/dt
50
A/µs
Operating frequency
f
45 to 65 Hz
*1Isolation voltage
Viso(rms) 4.0
kV
Operating temperature
Topr −25 to +100 ˚C
Storage temperature
*2Soldering temperature
Tstg −30 to +125 ˚C
Tsol
260
˚C
*1 40 to 60%RH, AC for 1minute, f=60Hz
*2 For 10s
*3 Refer to Fig.1, Fig.2
*4 f=60Hz sine wave, Tj=25˚C start
S116S02 Series
S216S02 Series
Soldering area
■ Electro-optical Characteristics
Parameter
Symbol
Conditions
Forward voltage
Input
Reverse current
VF
IF=20mA
IR
VR=3V
Repetitive peak OFF-state current
IDRM
VD=VDRM
ON-state voltage
VT(rms) IT(rms)=16A, Resistance load, IF=20mA
Output Holding current
IH
−
Critical rate of rise of OFF-state voltage dV/dt
VD=2/3•VDRM
Critical rate of rise of OFF-state voltage at commutaion (dV/dt)c Tj=125˚C, VD=2/3•VDRM, dIT/dt=−8A/ms
Minimum trigger current
IFT
VD=6V, RL=30Ω
Isolation resistance
RISO
DC500V, 40 to 60%RH
Zero cross voltage
VOX
IF=8mA
Transfer Turn-on time
charac-
teristics
S116S02
VD(rms)=100V, AC50Hz
S216S02
ton
IT(rms)=2A, Resistance load, IF=20mA
VD(rms)=200V, AC50Hz
IT(rms)=2A, Resistance load, IF=20mA
Turn-off time
S116S02
VD(rms)=100V, AC50Hz
S216S02
toff
IT(rms)=2A, Resistance load, IF=20mA
VD(rms)=200V, AC50Hz
IT(rms)=2A, Resistance load, IF=20mA
Thermal resistance
Rth(j-c)
Rth(j-a)
Between junction and case
Between junction and ambient
MIN.
−
−
−
−
−
30
5
−
1010
−
−
−
−
−
−
−
TYP.
1.2
−
−
−
−
−
−
−
−
−
−
−
−
−
3.3
40
(Ta=25˚C)
MAX. Unit
1.4 V
100 µA
100 µA
1.5 V
50 mA
− V/µs
− V/µs
8 mA
−
Ω
35 V
10
ms
10
10
ms
10
−
˚C/W
−
Sheet No.: D4-A02701EN
4
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