TDA4655 Просмотр технического описания (PDF) - Philips Electronics
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TDA4655 Datasheet PDF : 17 Pages
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Philips Semiconductors
Generic multi-standard decoder
Preliminary specification
TDA4655
SYMBOL
PARAMETER
CONDITIONS
fg
cut-off frequency
td
chrominance delay time
S/N
signal to noise ratio for 100 mV (p-p) input
signal and nominal output voltages
V1, V3
residual carrier at CD outputs:
1 × subcarrier frequency
(peak-to-peak value)
2 × subcarrier frequency
(peak-to-peak value)
∆V3
shift of demodulated f0 level relative to
blanking level −(B-Y) output
∆V1
−(R-Y) output
Impedance and currents see PAL or NTSC specification
−3 dB
note 3
note 9
Capacitor for SECAM de-emphasis (pin 2)
C2
RA
RB
∆(RA/RB)
value of external capacitor
value of internal de-emphasis resistors
Tamb = +35 °C
relative tolerance of de-emphasis resistors
Capacitors for SECAM demodulator control (pins 4 and 10; note 6)
∆V1, 3
shift of demodulated f0 level due to
external leakage current
Cext = 220 nF
Resistor for SECAM oscillator (pin 7)
V7
DC voltage
R7
value of external resistor (±1%)
C7
value of external capacitor (±20%)
Chrominance input (pin 11)
V11
input signal (peak-to-peak value)
R11
input resistance
C11
input capacitance
Capacitor for ACC (pin 12; note 8)
note 7
∆V1, 3
change of CD output signals during field Cext = 100 nF
blanking due to external leakage current
Hue control (NTSC) and service switch (pin 13)
φ
phase shift of reference carrier relative to V13 = 3 V
phase at open-circuit pin 13
V13 = open circuit
V13 = 5 V
V13
internal bias voltage
pin 13 open circuit
(proportional to supply voltage)
R13
input resistance
MIN.
−
400
40
TYP.
730
500
−
MAX. UNIT
−
kHz
600 ns
−
dB
−
−
10
mV
−
−
20
mV
−
0
±13 mV
−
0
±10 mV
−
220 −
pF
2.4 2.8 3.2 kΩ
4.8 5.6 6.4 kΩ
−
−
±5
%
−
−
0.3 mV/nA
2.4 2.81 3.2 V
−
5.62 −
kΩ
-
10
-
nF
20
200 400 mV
16
20
24
kΩ
−
−
10
pF
−
0.2 −
%/nA
−30 −
−
°
−5
0
+5
°
+30 −
−
°
3.8 4.0 4.2 V
25
30
35
kΩ
June 1993
8
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