HM62G18512BP-4 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HM62G18512BP-4

8M Synchronous Fast Static RAM (512k-word × 18-bit)

Hitachi -> Renesas Electronics 

HM62G18512 Series

Capacitance (Ta = 25°C, f = 1 MHz)

Parameter

Symbol Min

Max Unit Note

Input capacitance (SAn, SS, SWE, SWEx)

Input capacitance (K, K, G)

CIN

CCLK

—

4

—

7

pF

1

pF

1

Input/Output capacitance (DQxn)

CIO

—

5

Note: 1. This parameter is sampled and not 100% tested.

pF

1

AC Characteristics (Ta = 0 to 70°C, [Tj max = 110°C], VDD = 3.3 V +10%, –5%)

Test Conditions

• Input pulse levels (K, K): VDIF = 0.75 V, VCM = 0.75 V

• Input timing reference level (K, K): Differential cross point

• Input pulse levels (except K, K): VIL = 0.25 V, VIH = 1.25 V

• Input and output timing reference levels (except K, K): VREF = 0.75 V

• Input rise and fall time: 0.5 ns (10% to 90%)

• Measurement condition: the minimum impedance push pull output buffer mode, IOH = –6 mA, IOL = 6

mA

• Output driver supply voltage: VDDQ = 1.5 V

• Output load: See figure

16.7 Ω

DQ

16.7 Ω

16.7 Ω

50 Ω

50 Ω

5 pF

5 pF

50 Ω

0.75 V

50 Ω

0.75 V

0.75 V

9

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