HM62G36256BP-5 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталоге

Компоненты Описание

Список матч

HM62G36256BP-5

8M Synchronous Fast Static RAM (256k-word × 36-bit)

Hitachi -> Renesas Electronics 

HM62G36256 Series

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Notes

Input voltage on any pin

Core supply voltage

Output supply voltage

Operating temperature

Storage temperature

Junction temperature

VIN

VDD

VDDQ

TOPR

TSTG

Tj

–0.5 to VDDQ + 0.5

V

1, 4

–0.5 to 3.9

V

1

–0.5 to 2.2

V

1, 4

0 to 70

°C

–55 to 125

°C

110

°C

Output short–circuit current

I OUT

25

Latch up current

I LI

200

Package junction to case thermal resistance θJC

5

mA

mA

°C/W 5, 7

Package junction to ball thermal resistance θJB

8

°C/W 6, 7

Notes: 1. All voltage is referred to VSS.

2. Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional

operation should be restricted the Operation Conditions. Exposure to higher than recommended

voltages for extended periods of time could affect device reliability.

3. These CMOS memory circuits have been designed to meet the DC and AC specifications shown

in the tables after thermal equilibrium has been established.

4. The supply voltage application sequence need to be powered up in the following manner: VSS,

VDD, VDDQ, VREF then VIN. Remember, according to the Absolute Maximum Ratings table, VDDQ is

not to exceed 3.9 V, whatever the instantaneous value of VDDQ.

5. θJC is measured at the center of mold surface in fluorocarbon (See Figure “Definition of

Measurement”).

6. θJB is measured on the center ball pad after removing the ball in fluorocarbon (See Figure

“Definition of Measurement”).

7. These thermal resistance values have error of ± 5°C/W.

θJC

θJB

T.C.

Fluorocarbon

T.C. Fluorocarbon

Definition of Measurement

6

Share Link: