RJU60C3SDPD(2011) Просмотр технического описания (PDF) - Renesas Electronics
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RJU60C3SDPD Datasheet PDF : 4 Pages
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Preliminary Datasheet
RJU60C3SDPD
Single Diode
Fast Recovery Diode
R07DS0375EJ0100
Rev.1.00
Apr 26, 2011
Features
• Fast reverse recovery time: trr = 90 ns typ. (at IF = 10 A, di/dt = 100 A/μs)
• Low forward voltage: VF = 1.4 V typ. (at IF = 30 A)
• Low reverse current: IR = 1 μA max. (at VR = 600 V)
Outline
RENESAS Package code: PRSS0004ZJ-A
(Package name : TO-252)
4
2, 4
12 3
1
3
1. Anode
2. Cathode
3. Anode
4. Cathode
Absolute Maximum Ratings
Item
Maximum reverse voltage
Average rectified forward current
Continuous forward current Tc = 25°C
Tc = 100°C
Peak surge forward current
Junction to case thermal resistance
Junction temperature
Storage temperature
Electrical Characteristics
Symbol
VRM
Io
IF
IF
IFSM
θj-cd
Tj
Tstg
Item
Forward Voltage
Reverse current
Reverse Recovery Time
Symbol Min
Typ
VF
⎯
1.4
IR
⎯
⎯
trr
⎯
90
Ratings
600
10
30
15
80
3.0
150
–55 to +150
(Ta = 25°C)
Unit
V
A
A
A
A
°C/W
°C
°C
(Ta = 25°C)
Max
Unit
Test conditions
2.1
V IF = 30 A
1
μA VR = 600 V
⎯
ns IF = 10 A, di/dt = 100 A/μs
R07DS0375EJ0100 Rev.1.00
Apr 26, 2011
Page 1 of 3
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