RJP1CS08DWT/RJP1CS08DWA
Preliminary
Electrical Characteristics (These data are an actual measurement value in a package.)
Item
Symbol Min
Zero gate voltage collector current
ICES
—
Gate to emitter leak current
IGES
—
Gate to emitter cutoff voltage
VGE(off)
5.0
Collector to emitter saturation voltage VCE(sat)
—
Input capacitance
Cies
—
Output capacitance
Coes
—
Reveres transfer capacitance
Cres
—
Switching time
td(on)
—
tr
—
td(off)
—
tf
—
Short circuit withstand time
tsc
10
Typ
—
—
—
1.80
19.5
0.56
0.46
130
120
730
120
—
Notes: 1. Pulse test.
2. Switching time test circuit and waveform are shown below.
Max
1
±1
6.8
2.25
—
—
—
—
—
—
—
—
Unit
A
A
V
V
nF
nF
nF
ns
ns
ns
ns
s
(Ta = 25°C)
Test Conditions
VCE = 1250 V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10 V, IC = 6.7 mA
IC = 200 A, VGE = 15 V Note1
VCE = 25 V
VGE = 0
f = 1 MHz
VCC = 600 V Note2
IC = 200 A
VGE = ±15 V
Rg = 10 , Tj = 125 C
Inductive load
VCC 720 V , VGE = 15 V
Tj = 150 C
Switching Time Test Circuit
Waveform
Diode clamp
Rg
L
D.U.T
VGE
90%
VCC
IC
90%
10%
90%
10%
td(off)
tf
10%
td(on) tr
R07DS0831EJ0100 Rev.1.00
Jan 23, 2013
Page 2 of 3