RJK6013DPP-E0 Просмотр технического описания (PDF) - Renesas Electronics
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RJK6013DPP-E0 Datasheet PDF : 7 Pages
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RJK6013DPP-E0
10000
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100
Coss
10
VGS = 0
f = 1 MHz
1 Ta = 25°C
0
100
Crss
200
300
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
20
VGS = 0 V
Ta = 25 °C
16
Pulse Test
12
8
4
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Preliminary
Dynamic Input Characteristics (Typical)
800
ID = 11 A
Ta = 25 °C
600
VDS
VDS = 100 V
300 V
480 V
16
VGS
12
400
8
200
4
VDS = 480 V
300 V
100 V
0
0
8
16 24 32 40
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
VDS = 10 V
4
3 ID = 10 mA
1 mA
0.1 mA
2
1
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0612EJ0100 Rev.1.00
Feb 20, 2012
Page 4 of 6
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