HN58C65FP-25 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HN58C65FP-25

8192-word × 8-bit Electrically Erasable and Programmable CMOS ROM

Hitachi -> Renesas Electronics 

HN58C65 Series

WE, CE Pin Operation

During a write cycle, addresses are latched by the falling edge of WE or CE and data is latched by the rising

edge of WE or CE.

Write/Erase Endurance and Data Retention Time

The endurance is 105 cycles in case of the page programming and 3 × 103 cycles in case of byte programming

(1% cumulative failure rate). The data retention time is more than 10 years when a device is page-

programmed less than 104 cycles.

Data Protection

1. Data Protection against Noise on Control Pins (CE, OE, WE) during Operation

During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to progam

mode by mistake. To prevent this phenomenon, this device has a noise cancelation function that cuts

noise if its width is 20 ns or less in program mode. Be careful not to allow noise of a width of more than

20 ns on the control pins.

WE

5V

CE

0V

5V

OE

0V

20 ns max

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