BDX67(2012) Просмотр технического описания (PDF) - Comset Semiconductors

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BDX67
(Rev.:2012)

NPN SILICON DARLINGTON POWER TRANSISTOR

Comset Semiconductors 

BDX67 – A – B – C

THERMAL CHARACTERISTICS

Symbol

Ratings

RthJ-C

Thermal Resistance, Junction to Case

BDX67

BDX67A

BDX67B

BDX67C

Value

1.17

Unit

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

VCEO(SUS)

Collector-Emitter

Breakdown Voltage (*)

ICEO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

ICBO

Collector-Base Cutoff

Current

Test Condition(s)

Min Typ Max Unit

IC=0.1 A,

L=25mH

VCE=30 V

VCE=40 V

VCE=50 V

VCE=60 V

VBE=5 V

TCASE=25°C

VCB=60 V

TCASE=200°C

VCB=40 V

TCASE=25°C

VCB=80 V

TCASE=200°C

VCB=50 V

BDX67

60

-

-

BDX67A 80 -

-

V

BDX67B 100 -

-

BDX67C 120 -

-

BDX67

-

-

BDX67A -

-

3 mA

BDX67B -

-

BDX67C -

-

BDX67

BDX67A

BDX67B

-

BDX67C

- 5.0 mA

-

-

1

BDX67

-

-

5

mA

-

-

1

BDX67A

-

-

5

05/10/2012

COMSET SEMICONDUCTORS

2/4

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