RCD080N25 Просмотр технического описания (PDF) - ROHM Semiconductor
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RCD080N25 Datasheet PDF : 6 Pages
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RCD080N25
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics (Ⅰ)
2
VGS=10.0V
1.8
VGS=8.0V
1.6
VGS=7.0V
Ta=25°C
pulsed
1.4
VGS=6.5V
1.2
1
0.8
VGS=6.0V
0.6
0.4
VGS=5.0V
VGS=5.5V
0.2
0
0
0.2
0.4
0.6
0.8
1
Drain-Source Voltage : VDS [V]
Fig.3 Typical Transfer Characteristics
100
VDS=10V
pulsed
10
Ta=125°C
Ta=75°C
1
Ta=25°C
Ta=-25°C
0.1
0.01
0.001
0 1 2 3 4 5 6 7 8 9 10
Gate-Source Voltage : VGS [V]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
10
VGS=10V
pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.01
0.1
1
10
100
Drain Current : ID [A]
Data Sheet
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Fig.2 Typical Output Characteristics (Ⅱ)
VGS=10.0V
VGS=8.0V
VGS=7.0V
VGS=6.5V
Ta=25°C
pulsed
VGS=6.0V
VGS=5.0V
VGS=5.5V
2
4
6
8
10
Drain-Source Voltage : VDS [V]
Fig.4 Gate Threshold Voltage vs. Channel Temperature
6
VDS=10V
ID=1mA
pulsed
5
4
3
2
-50 -25
0 25 50 75 100 125 150
Channel Temperature : Tch [℃]
Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature
0.7
VGS=10V
pulsed
0.6
0.5
ID=8A
0.4
0.3
ID=4A
0.2
0.1
0
-50 -25 0 25 50 75 100 125 150
Channel Temperature : Tch [℃]
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3/5
2011.11 - Rev.A
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