IXTY01N80 Просмотр технического описания (PDF) - IXYS CORPORATION

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IXTY01N80

High Voltage MOSFET

IXYS CORPORATION 

High Voltage MOSFET

N-Channel, Enhancement Mode

IXTU 01N80

IXTY 01N80

V = 800 V

DSS

I

= 100mA

D25

= RDS(on) 50 Ω

Symbol

VDSS

VDGR

VGS

V

GSM

ID25

IDM

PD

T

J

TJM

Tstg

TL

Weight

Test Conditions

TJ = 25°C to 150°C

TJ = 25°C to 150°C; RGS = 1 MΩ

Continuous

Transient

TC = 25°C; TJ = 25°C to 150°C

TC = 25°C, pulse width limited by max. TJ

TC = 25°C

1.6 mm (0.063 in) from case for 5 s

Maximum Ratings

01N100

800

V

800

V

±20

V

±30

V

100

mA

400

mA

25

W

-55 ... +150

°C

150

°C

-55 ... +150

°C

300

°C

0.8

g

TO-251 AA (IXTU)

G

D

S

D (TAB)

TO-252 AA (IXTY)

G

S

G = Gate,

S = Source,

D (TAB)

D = Drain,

TAB = Drain

Symbol

VDSS

VGS(th)

IGSS

IDSS

RDS(on)

Test Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

VGS = 0 V, ID = 25 µA

800

VDS = VGS, ID = 25 µA

2

VGS = ±20 VDC, VDS = 0

VDS = 0.8 • VDSS

V =0V

GS

TJ = 25°C

T = 125°C

J

VGS = 10 V, ID = ID25

Pulse test, t ≤ 300 ms, duty cycle d ≤ 2 %

V

V

4.5 V

±50 nA

10 µA

200 µA

50 Ω

Features

z Internationalstandardpackages

JEDEC TO-251 AA, TO-252 AA

z Low RDS (on) HDMOSTM process

z Rugged polysilicon gate cell structure

z Fast switching times

Applications

z Level shifting

z Triggers

z Solid state relays

z Current regulators

© 2002 IXYS All rights reserved

98841A (6/02)

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