R5F212C7SDFP Просмотр технического описания (PDF) - Renesas Electronics

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R5F212C7SDFP

RENESAS MCU

Renesas Electronics 

R8C/2C Group, R8C/2D Group

5. Electrical Characteristics

Table 5.30 Electrical Characteristics (5) [VCC = 2.2 V]

Symbol

Parameter

Condition

Standard

Unit

Min.

Typ. Max.

VOH

Output “H” voltage Except P2_0 to P2_7, IOH = −1 mA

XOUT

VCC − 0.5

−

VCC

V

P2_0 to P2_7

Drive capacity IOH = −2 mA VCC − 0.5

−

HIGH

VCC

V

Drive capacity IOH = −1 mA VCC − 0.5

−

LOW

VCC

V

XOUT

Drive capacity IOH = −0.1 mA VCC − 0.5

−

HIGH

VCC

V

Drive capacity IOH = −50 µA VCC − 0.5

−

LOW

VCC

V

VOL

Output “L” voltage Except P2_0 to P2_7, IOL = 1 mA

XOUT

−

−

0.5

V

P2_0 to P2_7

Drive capacity IOL = 2 mA

−

−

0.5

V

HIGH

Drive capacity IOL = 1 mA

−

−

0.5

V

LOW

XOUT

Drive capacity IOL = 0.1 mA

−

HIGH

−

0.5

V

Drive capacity IOL = 50 µA

−

−

0.5

V

LOW

VT+-VT- Hysteresis

INT0, INT1, INT2,

INT3, KI0, KI1, KI2,

KI3, TRAIO, TRFI,

RXD0, RXD1, CLK0,

CLK1, CLK2, SSI,

SCL, SDA, SSO

0.05

0.3

−

V

RESET

0.05

0.15

−

V

IIH

Input “H” current

VI = 2.2 V

−

−

4.0

µA

IIL

Input “L” current

VI = 0 V

−

−

−4.0 µA

RPULLUP Pull-up resistance

VI = 0 V

100

200 600 kΩ

RfXIN Feedback resistance XIN

−

5

−

MΩ

RfXCIN Feedback resistance XCIN

−

35

−

MΩ

VRAM RAM hold voltage

During stop mode

1.8

−

−

V

NOTE:

1. VCC = 2.2 V at Topr = −20 to 85°C (N version) / −40 to 85°C (D version), f(XIN) = 5 MHz, unless otherwise specified.

Rev.1.00 Feb 09, 2007 Page 51 of 55

REJ03B0183-0100

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