R6020FNX Просмотр технического описания (PDF) - ROHM Semiconductor
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R6020FNX Datasheet PDF : 15 Pages
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R6020FNX
Nch 600V 20A Power MOSFET
Datasheet
Outline
VDSS
RDS(on) (Max.)
600V
0.25
TO-220FM
ID
20A
PD
85W
Features
1) Fast reverse recovery time (trr).
Inner circuit
(1) (2) (3)
(2)
for
2) Low on-resistance.
3) Fast switching speed.
*1
d (1)
4) Gate-source voltage (VGSS) guaranteed to be 30V.
e 5) Drive circuits can be simple.
(3)
d 6) Parallel use is easy.
Packaging specifications
n s 7) Pb-free lead plating ; RoHS compliant
Packaging
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
Bulk
e n Reel size (mm)
-
m ig Application
s Switching Power Supply
Tape width (mm)
-
Type
Basic ordering unit (pcs)
500
Taping code
-
m eMarking
R6020FNX
o D Absolute maximum ratings(Ta = 25°C)
c Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
600
V
e w Tc = 25°C
ID *1
20
A
R Continuous drain current
eTc = 100°C
ID *1
9.9
A
t N Pulsed drain current
ID,pulse *2
80
A
o Gate - Source voltage
VGSS
30
V
NAvalanche energy, single pulse
EAS *3
26.7
mJ
Avalanche energy, repetitive
EAR *4
3.5
mJ
Avalanche current
IAR *3
10
A
Power dissipation (Tc = 25°C)
PD
85
W
Junction temperature
Tj
150
°C
Range of storage temperature
Tstg
55 to 150
°C
Reverse diode dv/dt
dv/dt *5
15
V/ns
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2016.02 - Rev.D
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