R6020FNX(2011) Просмотр технического описания (PDF) - ROHM Semiconductor
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R6020FNX Datasheet PDF : 7 Pages
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R6020FNX
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics (Ⅰ)
5
Ta=25℃
pulsed
4
3
VGS=10.0V
VGS=8.0V
VGS=7.0V
VGS=6.5V
VGS=6.0V
2
VGS=5.5V
1
VGS=5.0V
0
0
0.2
0.4
0.6
0.8
1
Drain-Source Voltage : VDS [V]
Fig.3 Typical Transfer Characteristics
100
VDS=10V
pulsed
10
Ta=125℃
Ta= 75℃
Ta= 25℃
1
Ta= -25℃
0.1
0.01
0.001
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
Gate-Source Voltage : VGS [V]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
1
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
VGS=10V
pulsed
0.1
0.01
0.1
1
10
100
Drain Current : ID [A]
Data Sheet
Fig.2 Typical Output Characteristics (Ⅱ)
30
Ta=25℃
pulsed
25
VGS=10.0V
VGS=8.0V
VGS=7.0V
20
VGS=6.5V
15
10
5
0
0
VGS=6.0V
VGS=5.0V VGS=5.5V
2
4
6
8
10
Drain-Source Voltage : VDS [V]
Fig.4 Gate Threshold Voltage vs. Channel Temperature
6
VDS=10V
ID=1mA
pulsed
5
4
3
2
-50
0
50
100
150
Channel Temperature : Tch [℃]
Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature
0.6
VGS=10V
pulsed
0.5
0.4
ID=20A
0.3
ID=10A
0.2
0.1
0
-50 -25
0 25 50 75 100 125 150
Channel Temperature : Tch [℃]
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2011.10 - Rev.A
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