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BC846AW

NPN Silicon AF Transistor

Siemens AG 

BC 846W ... BC 850W

Characteristic at TA = 25 ˚C, unless otherwise specified.

Description

Symbol

Ratings

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

V(BR)CEO

IC = 10 mA

BC 846 W

65

–

–

BC 847 W, BC 850 W

45

–

–

BC 848 W, BC 849 W

30

–

–

Collector-base breakdown voltage1)

V(BR)CBO

IC = 100 µA

BC 846 W

80

–

–

BC 847 W, BC 850 W

50

–

–

BC 848 W, BC 849 W

30

–

–

Collector-emitter breakdown voltage

V(BR)CBO

IC = 10 µA, VBE = 0

BC 846 W

80

–

–

BC 847 W, BC 850 W

50

–

–

BC 848 W, BC 849 W

30

–

–

Emitter-base breakdown voltage

V(BR)EBO

IE = 10 µA

BC 846 W, BC 847 W

6

BC 848 W, BC 849 W

5

–

–

BC 850

–

–

Collector-base cutoff current

ICBO

VCB = 30 V

VCB = 30 V, TA = 150 ˚C

DC current gain

IC = 10 µA, VCE = 5 V

hFE

BC 846 AW ... BC 848 AW

BC 846 BW ... BC 850 BW

BC 847 CW ... BC 850 CW

IC = 2 mA, VCE = 5 V BC 846 AW ... BC 848 AW

BC 846 BW ... BC 850 BW

BC 847 CW ... BC 850 CW

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

–

–

15

–

–

5

–

140 –

–

250 –

–

480 –

110 180 220

200 290 450

420 520 800

–

90 250

–

900 650

Base-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

–

–

700 –

900 –

Base-emitter voltage1)

IC = 2 mA, VCE = 0.5 mA

IC = 10 mA, VCE = 5 mA

VCEsat

580 660 700

–

–

770

Unit

V

V

V

V

nA

µA

–

mV

mV

mV

1)Pulse test : t ≤ 300 µs, D= 2 %.

Semiconductor Group

3

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