PT200S8 Просмотр технического описания (PDF) - Nihon Inter Electronics
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PT200S8 Datasheet PDF : 3 Pages
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DIODE MODULE 200A/800V
FEATURES
* Isolated Base
* 3 Phase Bridge Circuit
* Designed Power Circuit Board
* High Surge Capability
* UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* Rectified For General Use
PT200S8
OUTLINE DRAWING
Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage *1
Non Repetitive Peak Reverse Voltage *1
Symbol
VRRM
VRSM
Approx Net Weight:370g
Type / Grade
PT200S8
800
1000
Unit
V
Parameter
Average Rectified Output Current
Surge Forward Current *1
I Squared t *1
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
Mounting torque
Case mounting
Terminals
IO(AV)
IFSM
I2t
Tjw
Tstg
Viso
Ftor
Conditions
Max Rated
Value
Unit
3-Phase Full Wave Rectified
Tc=Tt(Terminal)=103°C
200
A
50 Hz Half Sine Wave,1Pulse
Non-repetitive
1850
A
2msec to 10msec
170000 A2s
-40 to +150 °C
-40 to +125 °C
Base Plate to Terminals, AC1min
2000
V
Greased
M5 Screw
M5
2.4 to 2.8
2.4 to 2.8
N•m
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current *1
Peak Forward Voltage *1
Thermal Resistance
*1: Value Per 1Arm
Symbol
Test Conditions
IRM VRM= VRRM, Tj= 150°C
VFM IFM= 200A, Tj=25°C
Rth(j-c) Junction to Case (Total)
Rth(c-f)
Base Plate to Heat
Compound (Total)
Sink
with
Thermal
Max. Unit
20 mA
1.2 V
0.1
0.06 °C/W
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