PSMN1R2-30YLC
N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using
NextPower technology
Rev. 1 — 3 May 2011
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High reliability Power SO8 package,
qualified to 175°C
Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
Ultra low QG, QGD, and QOSS for
high system efficiencies at low and
high loads
Ultra low Rdson and low parasitic
inductance
1.3 Applications
DC-to-DC converters
Lithium-ion battery protection
Load switching
Power OR-ing
Server power supplies
Sync rectifier
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source voltage 25 °C ≤ Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot
total power dissipation Tmb = 25 °C; see Figure 2
Tj
junction temperature
Static characteristics
RDSon
drain-source on-state VGS = 4.5 V; ID = 25 A;
resistance
Tj = 25 °C;
see Figure 12
VGS = 10 V; ID = 25 A;
Tj = 25 °C;
see Figure 12
Min Typ Max Unit
-
-
30 V
[1] -
-
100 A
-
-
-55 -
215 W
175 °C
-
1.35 1.65 mΩ
-
1.05 1.25 mΩ