PSD162/08 Просмотр технического описания (PDF) - Powersem GmbH
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PSD162/08 Datasheet PDF : 2 Pages
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PSD 162
300
[A]
250
200
150
100
Tvj = 150°C
50
IF
Tvj = 25°C
0
0.5
1
1.5
2
VF [V]
Fig. 1 Forward current versus
voltage drop per diode
I-I-FF-S(-MO-V-)
1.6
IFSM (A)
TVJ=45°C TVJ=150°C
1800
1600
5
10
A2s
1.4
1.2
1
0.8
0.6
0 VRRM
1/2 VRRM
1 VRRM
0.4
100
101 t[ms] 102
103
Fig. 2 Surge overload current
per diode IFSM: Crest value. t:
duration
TVJ=45°C
104
TVJ=150°C
103
1
2
4 6 10
t [ms]
Fig. 3 ∫i2dt versus time
(1-10ms) per diode (or thyristor)
600
[W]
PSD
162
500
400
300
200
100
PVTOT
0
25
75
IFAVM
DC
sin.180°
rec.120°
rec.60°
rec.30°
125 175 0
[A]
T7C0
75
0.08 0.04 = RTHCA [K/W] 80
0.12
85
90
95
0.2
100
105
110
115
0.37
120
125
130
0.87
135
140
50
Tamb
145
°C
150
100
150
[K]
Fig. 4 Power dissipation versus direct output current and ambient
temperature
200
[A]
150
125
100
75
50
IdA25V
0
DC
sin.180°
rec.120°
rec.60°
rec.30°
50
100 150 200
TC(°C)
Fig.5 Maximum forward current
at case temperature
1
K/W
0.8
Z thJK
Z thJC
0.6
0.4
0.2
Z th
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode (or Thyristor),
calculated
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