PSB192 Просмотр технического описания (PDF) - Powersem GmbH
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PSB192 Datasheet PDF : 2 Pages
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PSB 192
200
[A]
150
100
50
Tvj = 150°C
IF
Tvj = 25°C
0
0.5 1 1.5 2
VF [V]
Fig. 1 Forward current versus
voltage drop per diode
I-I-FF-S(-MO-V-)
1.6
1.4
1.2
IFSM (A)
TVJ=45°C TVJ=150°C
2800
2500
105
A2s
TVJ=45°C
TVJ=150°C
104
1
0.8
0.6
0 VRRM
1/2 VRRM
1 VRRM
0.4
100
101 t[ms] 102
103
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
103
1
2
4 6 10
t [ms]
Fig. 3 ∫i2dt versus time
(1-10ms) per diode (or thyristor)
400
[W] PSB 192
350
300
250
200
150
100
50
PVTOT
0
50
IFAVM
85
TC
0.15 0.09 = RTHCA [K/W] 90
0.21
95
100
105
0.34
110
115
0.59
DC
sin.180°
rec.120°
rec.60°
rec.30°
1.34
100
150 0
50
[A] Tamb
100
120
125
130
135
140
145
°C
150
150
[K]
Fig. 4 Power dissipation versus direct output current and ambient
temperature
1
K/W
200
[A]
150
100
DC
sin.180°
rec.120°
rec.60°
rec.30°
50
IdAV
0
50 100 150 200
Fig.5 Maximum forward current
at case temperature
0.5
Z thJK
Z thJC
Zth
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
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