PJ4800 Просмотр технического описания (PDF) - PANJIT INTERNATIONAL

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PJ4800

30V N-Channel Enhancement Mode MOSFET

PANJIT INTERNATIONAL 

PJ4800

Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)

10

VDS =15 V

8 ID =8.0A

6

4

2

0

0

4

8

12

16

Qg - Gate Charge (nC)

Fig. 7 Gate Charge Waveform

36

35

34

33

32

31

30

29

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (oC)

Fig.9 Breakdown Voltage vs Junction Temperature

100

VGS = 0V

10

1 TJ = 125oC

0.1

-55oC

25oC

0.01

0.2

0.4 0.6 0.8 1 1.2 1.4

VSD - Source-to-Drain Voltage (V)

Fig.8 Source-Drain Diode Forward Voltage

1.3

1.2

1.1

1

0.9

0.8

0.7

0.6

-50

-25 0 25 50 75 100 125 150

TJ - Junction Temperature (oC)

Fig.10 Threshold Voltage vs Junction Temperature

December 01.2009-REV.00

PAGE. 4

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