PHP2N60 Просмотр технического описания (PDF) - Philips Electronics
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PHP2N60 Datasheet PDF : 7 Pages
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Philips Semiconductors
Product specification
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PowerMOS transistor
PHP2N60
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GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope featuring high
avalanche energy capability, stable
off-state characteristics, fast
switching and high thermal cycling
performance with low thermal
resistance. Intended for use in
Switched Mode Power Supplies
(SMPS), motor control circuits and
general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. UNIT
---------------- ------------------------------------------------------- ----------- -----------
VDS
ID
Ptot
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
600
V
2.8
A
83
W
4.4
Ω
PINNING - TO220AB
PIN
DESCRIPTION
1 gate
2 drain
3 source
tab drain
PIN CONFIGURATION
tab
1 23
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
ID
Continuous drain current
IDM
PD
∆PD/∆Tmb
VGS
EAS
IAS
Pulsed drain current
Total dissipation
Linear derating factor
Gate-source voltage
Single pulse avalanche
energy
Peak avalanche current
Tj, Tstg
Operating junction and
storage temperature range
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
Tmb > 25 ˚C
VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω;
VGS = 10 V
VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω;
VGS = 10 V
MIN.
-
-
-
-
-
-
-
-
- 55
MAX.
2.8
1.8
11
83
0.67
± 30
84
2.2
150
UNIT
A
A
A
W
W/K
V
mJ
A
˚C
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN. TYP. MAX. UNIT
-
-
1.5 K/W
-
60
- K/W
April 1997
1
Rev 1.001
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