PHP24N03T Просмотр технического описания (PDF) - Philips Electronics
Номер в каталоге
Компоненты Описание
Список матч
PHP24N03T Datasheet PDF : 7 Pages
| |||
Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
PHP24N03T
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
IDSS
IGSS
±V(BR)GSS
RDS(ON)
Drain-source breakdown
VGS = 0 V; ID = 0.25 mA;
voltage
Tj = -55˚C
Gate threshold voltage
VDS = VGS; ID = 1 mA
Tj = 175˚C
Tj = -55˚C
Zero gate voltage drain current VDS = 30 V; VGS = 0 V;
Tj = 175˚C
Gate source leakage current VGS = ±10 V; VDS = 0 V
Tj = 175˚C
Gate source breakdown voltage IG = ±1 mA;
Drain-source on-state
VGS = 10 V; ID = 25 A
resistance
VGS = 10 V; ID = 12 A; Tj = 175˚C
MIN.
30
27
2.0
1.0
-
-
-
-
-
16
-
-
TYP.
-
-
3.0
-
-
0.05
-
0.02
-
-
50
-
MAX.
-
-
4.0
-
4.4
10
500
1
20
-
56
104
UNIT
V
V
V
V
V
µA
µA
µA
µA
V
mΩ
mΩ
DYNAMIC CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
gfs
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td on
tr
td off
tf
Ld
Forward transconductance
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Ld
Internal drain inductance
Ls
Internal source inductance
CONDITIONS
VDS = 25 V; ID = 12 A
ID = 10 A; VDD = 30 V; VGS = 10 V
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 25 A;
VGS = 10 V; RG = 10 Ω
Resistive load
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN.
2
-
-
-
-
-
-
-
-
-
-
-
TYP.
7.2
13
3.2
5.4
385
152
85
9
40
15
20
3.5
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
-
4.5
-
nH
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
current
IDRM
Pulsed reverse drain current
VSD
Diode forward voltage
IF = 25 A; VGS = 0 V
trr
Reverse recovery time
IF = 25 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = 0 V; VR = 25 V
MIN. TYP. MAX. UNIT
-
-
24
A
-
-
96
A
- 0.99 1.2 V
- 154 -
ns
-
0.5
-
µC
September 1997
2
Rev 1.100
Share Link: 