PHP23NQ15T Просмотр технического описания (PDF) - Philips Electronics
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PHP23NQ15T Datasheet PDF : 9 Pages
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Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
PHP23NQ15T, PHB23NQ15T
Gate-source voltage, VGS (V)
15
14 ID = 23A
13
12
Tj = 25 C
11
10
9
8
7
6
5
4
3
2
1
0
VDD = 30 V
VDD = 120 V
0 5 10 15 20 25 30 35 40 45 50 55 60
Gate charge, QG (nC)
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG)
Source-Drain Diode Current, IF (A)
30
VGS = 0 V
25
20
175 C
Tj = 25 C
15
10
5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Source-Drain Voltage, VSDS (V)
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
Maximum Avalanche Current, IAS (A)
100
10
25 C
Tj prior to avalanche = 150 C
1
0.1
0.001
0.01
0.1
1
10
Avalanche time, tAV (ms)
Fig.15. Maximum permissible non-repetitive
avalanche current (IAS) versus avalanche time (tAV);
unclamped inductive load
August 1999
6
Rev 1.000
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