PHB108NQ03LT Просмотр технического описания (PDF) - Philips Electronics
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PHB108NQ03LT Datasheet PDF : 14 Pages
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Philips Semiconductors
PHP/PHB/PHD108NQ03LT
TrenchMOS™ logic level FET
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
ID
drain-source voltage (DC)
drain-gate voltage (DC)
drain current (DC)
VGS
gate-source voltage
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
25 °C ≤ Tj ≤ 175 oC
25 °C ≤ Tj ≤ 175 oC; RGS = 20 kΩ
Tmb = 25 °C; VGS = 5 V; Figure 2 and 3
Tmb = 100 °C; VGS = 5 V; Figure 2 and 3
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tmb = 25 °C; Figure 1
IS
source (diode forward) current (DC)
ISM
peak source (diode forward) current
Avalanche ruggedness
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp ≤ 10 µs
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 43 A;
tp = 0.25 ms; VDD ≤ 15 V; RGS = 50 Ω;
VGS = 10 V; starting Tj = 25 °C
Min
Max Unit
-
25
V
-
25
V
-
75
A
-
60
A
-
±20
V
-
108
A
-
180
W
−55
+175 °C
−55
+175 °C
-
75
A
-
108
A
-
180
mJ
9397 750 10159
Product data
Rev. 02 — 11 September 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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