PDMB200BS12 Просмотр технического описания (PDF) - Nihon Inter Electronics
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PDMB200BS12 Datasheet PDF : 4 Pages
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QS043-402-20371（3/5）
400
350
300
250
200
150
100
50
0
0
16
14
12
10
8
6
4
2
0
0
Fig.1- Output Characteristics (Typical)
TC=25°C
VGE=20V
12V
11V
15V
10V
9V
1
2
3
4
Collector to Emitter Voltage VCE (V)
8V
7V
5
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=25°C
IC=100A
400A
200A
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical)
800
16
RL=3.0(
TC=25°C
700
14
600
12
500
10
400
VCE=600V
8
300
6
400V
200
200V
4
100
2
0
0
0
200
400
600
800
1000 1200 1400
Total Gate Charge Qg (nC)
400
350
300
250
200
150
100
50
0
0
16
14
12
10
8
6
4
2
0
0
Fig.2- Output Characteristics (Typical)
TC=125°C
VGE=20V
12V
15V
11V
10V
9V
8V
7V
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Fig.4- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=125°C
IC=100A
200A
400A
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical)
300000
100000
VGE=0V
f=1MHZ
TC=25°C
30000
10000
Cies
3000
1000
Coes
300
Cres
100
30
0.1 0.2
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
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