UPD45128163-I-E Просмотр технического описания (PDF) - Elpida Memory, Inc

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UPD45128163-I-E

128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)

Elpida Memory, Inc 

µPD45128163-I-E

Self refresh entry command

(/CS, /RAS, /CAS, CKE = Low, /WE = High)

After the command execution, self refresh operation continues while

CKE remains low. When CKE goes high, the µPD45128xxx exits the

self refresh mode.

During self refresh mode, refresh interval and refresh operation are

performed internally, so there is no need for external control.

Before executing self refresh, all banks must be precharged.

Fig.7 Self refresh entry command

CLK

CKE

/CS

/RAS

/CAS

/WE

BA0(A13), BA1(A12)

A10

Add

Burst stop command

(/CS, /WE = Low, /RAS, /CAS = High)

This command can stop the current burst operation.

Fig.8 Burst stop command in Full Page Mode

CLK

CKE H

/CS

/RAS

/CAS

/WE

BA0(A13), BA1(A12)

A10

Add

No operation

(/CS = Low, /RAS, /CAS, /WE = High)

This command is not an execution command. No operations begin or

terminate by this command.

Fig.9 No operation

CLK

CKE H

/CS

/RAS

/CAS

/WE

BA0(A13), BA1(A12)

A10

Add

Data Sheet E0729N10 (Ver. 1.0)

11

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